The company Quinas Technology was established with the aim of further developing and commercializing Ultramram, a revolutionary technology based on the research conducted at the University of Lancaster. This week, the University Laboratory unveiled the first real Ultramam memory chips.
Ultramam is a potentially game-changing technology that combines the non-volatile nature of flash memory with a speed surpassing that of DRAM. The memory is capable of retaining data even when the power is turned off and boasts an endurance that is 4,000 times greater than that of Nand. It can store data for over 1000 years and has a delay that is 1/10th that of DRAM, making it more energy-efficient. These remarkable features have attracted the attention of industry giants like Meta.
The core technology behind Ultramam is the Triple Barrier of Resonant Tunneling (TBRT) structure, which functions similarly to the oxide layer in Nand flash memory but offers data storage capabilities for over a millennium, according to the University of Lancaster team.
There have been two significant developments that have bolstered QUINAS’s confidence in the commercial success of Ultramam. Firstly, in August, Flash Memory Summit recognized them as “the most innovative startup in the field of flash memory.” Secondly, Quinas received substantial funding from Innovate UK, providing further validation of the product’s commercial viability.